N-Channel MOSFET, 20.2 A, 650 V, 3-Pin D2PAK Infineon IPB60R190C6ATMA1

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RS will no longer stock this product.
RS Stock No.:
911-4990
Mfr. Part No.:
IPB60R190C6ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

20.2 A

Maximum Drain Source Voltage

650 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

151 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

63 nC @ 10 V

Length

10.31mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

9.45mm

Height

4.57mm

Minimum Operating Temperature

-55 °C

Series

CoolMOS C6

COO (Country of Origin):
DE