Infineon OptiMOS 3 N-Channel MOSFET, 58 A, 100 V, 3-Pin D2PAK IPB123N10N3GATMA1

Stock information currently inaccessible
RS Stock No.:
911-0913
Mfr. Part No.:
IPB123N10N3GATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

58 A

Maximum Drain Source Voltage

100 V

Package Type

D2PAK (TO-263)

Series

OptiMOS 3

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

23.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

94 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.45mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

26 nC @ 10 V

Transistor Material

Si

Length

10.31mm

Height

4.57mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

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