N-Channel MOSFET, 75 A, 120 V, 3-Pin DPAK Infineon IPD110N12N3GATMA1

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We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
RS Stock No.:
911-0838
Mfr. Part No.:
IPD110N12N3GATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

120 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

11 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

136 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

49 nC @ 10 V

Length

6.73mm

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Width

6.22mm

Height

2.41mm

Series

OptiMOS 3

Minimum Operating Temperature

-55 °C

Infineon OptiMOS™3 Power MOSFETs, 100V and over



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.