Dual N-Channel MOSFET, 13 A, 100 V, 8-Pin TDSON Infineon BSC750N10NDGATMA1

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Subtotal (1 reel of 5000 units)*

£2,330.00

(exc. VAT)

£2,795.00

(inc. VAT)

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Units
Per unit
Per Reel*
5000 - 20000£0.466£2,330.00
25000 +£0.455£2,275.00

*price indicative

RS Stock No.:
911-0793
Mfr. Part No.:
BSC750N10NDGATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

100 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

26 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Length

5.15mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

8 nC @ 10 V

Width

5.9mm

Number of Elements per Chip

2

Series

OptiMOS 2

Height

1mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
SG