Infineon SIPMOS P-Channel MOSFET, 8.83 A, 60 V, 3-Pin DPAK SPD08P06PGBTMA1
- RS Stock No.:
- 911-0727
- Mfr. Part No.:
- SPD08P06PGBTMA1
- Brand:
- Infineon
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
Alternative
This product is not currently available. Here is our alternative recommendation.
Each (In a Pack of 10)
£0.451
(exc. VAT)
£0.541
(inc. VAT)
- RS Stock No.:
- 911-0727
- Mfr. Part No.:
- SPD08P06PGBTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 8.83 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | DPAK (TO-252) | |
| Series | SIPMOS | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 300 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2.1V | |
| Maximum Power Dissipation | 42 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 6.22mm | |
| Typical Gate Charge @ Vgs | 10 nC @ 10 V | |
| Length | 6.73mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Height | 2.41mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 8.83 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DPAK (TO-252) | ||
Series SIPMOS | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 300 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 42 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 6.22mm | ||
Typical Gate Charge @ Vgs 10 nC @ 10 V | ||
Length 6.73mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Height 2.41mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- SG
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant
· Pb-free lead plating, RoHS compliant
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
