N-Channel MOSFET, 14 A, 30 V, 8-Pin VSCONP Texas Instruments CSD17578Q3AT
- RS Stock No.:
- 908-3846
- Mfr. Part No.:
- CSD17578Q3AT
- Brand:
- Texas Instruments
Bulk discount available
Subtotal (1 pack of 10 units)*
£4.59
(exc. VAT)
£5.51
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 20 | £0.459 | £4.59 |
| 30 - 50 | £0.378 | £3.78 |
| 60 - 110 | £0.326 | £3.26 |
| 120 - 240 | £0.276 | £2.76 |
| 250 + | £0.271 | £2.71 |
*price indicative
- RS Stock No.:
- 908-3846
- Mfr. Part No.:
- CSD17578Q3AT
- Brand:
- Texas Instruments
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Texas Instruments | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 14 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | VSCONP | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 9.4 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 3.2 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 7.9 nC @ 4.5 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Length | 3.5mm | |
| Width | 3.5mm | |
| Transistor Material | Si | |
| Forward Diode Voltage | 1V | |
| Minimum Operating Temperature | -55 °C | |
| Series | NexFET | |
| Height | 0.9mm | |
| Select all | ||
|---|---|---|
Brand Texas Instruments | ||
Channel Type N | ||
Maximum Continuous Drain Current 14 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type VSCONP | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 9.4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 3.2 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 7.9 nC @ 4.5 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Length 3.5mm | ||
Width 3.5mm | ||
Transistor Material Si | ||
Forward Diode Voltage 1V | ||
Minimum Operating Temperature -55 °C | ||
Series NexFET | ||
Height 0.9mm | ||