Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Attribute
Value
Channel Type
P
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
55 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
170 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.83mm
Typical Gate Charge @ Vgs
120 nC @ 10 V
Length
10.67mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Transistor Material
Si
Height
9.65mm
Forward Diode Voltage
1.3V
Minimum Operating Temperature
-55 °C
Series
HEXFET
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