Infineon HEXFET N-Channel MOSFET, 85 A, 75 V, 3-Pin I2PAK IRFSL7762PBF
- RS Stock No.:
- 907-5101
- Mfr. Part No.:
- IRFSL7762PBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
£10.95
(exc. VAT)
£13.14
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | £1.095 | £10.95 |
| 50 - 240 | £0.965 | £9.65 |
| 250 - 490 | £0.834 | £8.34 |
| 500 - 1240 | £0.765 | £7.65 |
| 1250 + | £0.744 | £7.44 |
*price indicative
- RS Stock No.:
- 907-5101
- Mfr. Part No.:
- IRFSL7762PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 85 A | |
| Maximum Drain Source Voltage | 75 V | |
| Package Type | I2PAK (TO-262) | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 6.6 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 140 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 130 nC @ 10 V | |
| Length | 10.67mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Width | 4.83mm | |
| Height | 9.65mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 85 A | ||
Maximum Drain Source Voltage 75 V | ||
Package Type I2PAK (TO-262) | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 6.6 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 140 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 130 nC @ 10 V | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Width 4.83mm | ||
Height 9.65mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
