Infineon HEXFET N-Channel MOSFET, 255 A, 60 V, 7-Pin D2PAK IRFS7534-7PPBF

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Packaging Options:
RS Stock No.:
907-5094
Mfr. Part No.:
IRFS7534-7PPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

255 A

Maximum Drain Source Voltage

60 V

Package Type

D2PAK (TO-263)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

290 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Width

4.69mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

200 nC @ 10 V

Length

10.54mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

9.65mm

Forward Diode Voltage

1.2V

N-Channel Power MOSFET 60V to 80V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.