Infineon HEXFET N-Channel MOSFET, 255 A, 60 V, 7-Pin D2PAK IRFS7534-7PPBF
- RS Stock No.:
- 907-5094
- Mfr. Part No.:
- IRFS7534-7PPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£15.17
(exc. VAT)
£18.205
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £3.034 | £15.17 |
| 25 - 120 | £2.41 | £12.05 |
| 125 - 245 | £2.088 | £10.44 |
| 250 - 620 | £1.99 | £9.95 |
| 625 + | £1.784 | £8.92 |
*price indicative
- RS Stock No.:
- 907-5094
- Mfr. Part No.:
- IRFS7534-7PPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 255 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | HEXFET | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance | 2 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 290 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 200 nC @ 10 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Width | 4.69mm | |
| Length | 10.54mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Height | 9.65mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 255 A | ||
Maximum Drain Source Voltage 60 V | ||
Series HEXFET | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance 2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 290 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 200 nC @ 10 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Width 4.69mm | ||
Length 10.54mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
Height 9.65mm | ||