N-Channel MOSFET, 61 A, 55 V, 3-Pin IPAK Infineon IRLU3915PBF
- RS Stock No.:
- 907-5072
- Mfr. Part No.:
- IRLU3915PBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 15 units)*
£9.885
(exc. VAT)
£11.865
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 60 | £0.659 | £9.89 |
| 75 - 135 | £0.454 | £6.81 |
| 150 - 360 | £0.442 | £6.63 |
| 375 - 735 | £0.431 | £6.47 |
| 750 + | £0.42 | £6.30 |
*price indicative
- RS Stock No.:
- 907-5072
- Mfr. Part No.:
- IRLU3915PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 61 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | IPAK (TO-251) | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 17 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 120 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Number of Elements per Chip | 1 | |
| Width | 2.38mm | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 92 nC @ 10 V | |
| Length | 6.73mm | |
| Maximum Operating Temperature | +175 °C | |
| Height | 6.22mm | |
| Forward Diode Voltage | 1.3V | |
| Series | HEXFET | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 61 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type IPAK (TO-251) | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 17 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 120 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Number of Elements per Chip 1 | ||
Width 2.38mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 92 nC @ 10 V | ||
Length 6.73mm | ||
Maximum Operating Temperature +175 °C | ||
Height 6.22mm | ||
Forward Diode Voltage 1.3V | ||
Series HEXFET | ||
Minimum Operating Temperature -55 °C | ||