STMicroelectronics N-Channel MOSFET, 45 A, 1200 V, 3-Pin HiP247 SCT30N120
- RS Stock No.:
- 907-4741P
- Mfr. Part No.:
- SCT30N120
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal 5 units (supplied in a tube)*
£80.15
(exc. VAT)
£96.20
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 316 unit(s), ready to ship
Units | Per unit |
|---|---|
| 5 - 9 | £16.03 |
| 10 - 24 | £14.43 |
| 25 + | £14.34 |
*price indicative
- RS Stock No.:
- 907-4741P
- Mfr. Part No.:
- SCT30N120
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 45 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Package Type | HiP247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 100 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 270 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -10 V, +25 V | |
| Width | 5.15mm | |
| Length | 15.75mm | |
| Typical Gate Charge @ Vgs | 105 nC @ 20 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +200 °C | |
| Number of Elements per Chip | 1 | |
| Height | 20.15mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 3.5V | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 45 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type HiP247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 100 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 270 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -10 V, +25 V | ||
Width 5.15mm | ||
Length 15.75mm | ||
Typical Gate Charge @ Vgs 105 nC @ 20 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +200 °C | ||
Number of Elements per Chip 1 | ||
Height 20.15mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 3.5V | ||
N-Channel Silicon Carbide (SiC) MOSFET, STMicroelectronics
Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems.
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