N-Channel MOSFET, 5.7 A, 600 V, 3-Pin DPAK Infineon IPD60R750E6BTMA1
- RS Stock No.:
- 906-4482
- Mfr. Part No.:
- IPD60R750E6BTMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
£12.71
(exc. VAT)
£15.25
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | £1.271 | £12.71 |
| 20 - 90 | £1.005 | £10.05 |
| 100 - 190 | £0.748 | £7.48 |
| 200 - 490 | £0.67 | £6.70 |
| 500 + | £0.593 | £5.93 |
*price indicative
- RS Stock No.:
- 906-4482
- Mfr. Part No.:
- IPD60R750E6BTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 5.7 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.76 Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 48 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 17.2 nC @ 10 V | |
| Length | 6.73mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Width | 6.22mm | |
| Series | CoolMOS E6 | |
| Forward Diode Voltage | 0.9V | |
| Height | 2.41mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 5.7 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.76 Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 48 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 17.2 nC @ 10 V | ||
Length 6.73mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Width 6.22mm | ||
Series CoolMOS E6 | ||
Forward Diode Voltage 0.9V | ||
Height 2.41mm | ||
Minimum Operating Temperature -55 °C | ||
RoHS Status: Exempt
