N-Channel MOSFET, 5.7 A, 600 V, 3-Pin DPAK Infineon IPD60R750E6BTMA1

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Packaging Options:
RS Stock No.:
906-4482
Mfr. Part No.:
IPD60R750E6BTMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

5.7 A

Maximum Drain Source Voltage

600 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.76 Ω

Channel Mode

Enhancement

Maximum Power Dissipation

48 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

6.22mm

Typical Gate Charge @ Vgs

17.2 nC @ 10 V

Length

6.73mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Forward Diode Voltage

0.9V

Minimum Operating Temperature

-55 °C

Series

CoolMOS E6

Height

2.41mm

RoHS Status: Exempt

Infineon CoolMOS™E6/P6 series Power MOSFET


The Infineon range of CoolMOSE6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.