N-Channel MOSFET, 88 A, 200 V, 3-Pin TO-220 Infineon IPP110N20NAAKSA1
- RS Stock No.:
- 906-4448
- Mfr. Part No.:
- IPP110N20NAAKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£16.35
(exc. VAT)
£19.62
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £8.175 | £16.35 |
| 20 - 98 | £6.90 | £13.80 |
| 100 - 198 | £5.71 | £11.42 |
| 200 - 498 | £5.545 | £11.09 |
| 500 + | £5.40 | £10.80 |
*price indicative
- RS Stock No.:
- 906-4448
- Mfr. Part No.:
- IPP110N20NAAKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 88 A | |
| Maximum Drain Source Voltage | 200 V | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 11 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 300 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.36mm | |
| Typical Gate Charge @ Vgs | 65 nC @ 10 V | |
| Width | 4.57mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Series | OptiMOS 3 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 15.95mm | |
| Forward Diode Voltage | 1.2V | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 88 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 11 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Length 10.36mm | ||
Typical Gate Charge @ Vgs 65 nC @ 10 V | ||
Width 4.57mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Series OptiMOS 3 | ||
Minimum Operating Temperature -55 °C | ||
Height 15.95mm | ||
Forward Diode Voltage 1.2V | ||
RoHS Status: Exempt