Infineon OptiMOS™ 5 N-Channel MOSFET, 137 A, 60 V, 8-Pin TDSON BSC028N06NSATMA1

RS Stock No.:: 906-4296
Mfr. Part No.:: BSC028N06NSATMA1
Brand:: Infineon

Infineon OptiMOS™ 5 N-Channel MOSFET, 137 A, 60 V, 8-Pin TDSON BSC028N06NSATMA1

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Subtotal (1 pack of 10 units)*

£16.70

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£20.00

(inc. VAT)

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5,000 unit(s) shipping from 27 November 2025

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Units	Per unit	Per Pack*
10 - 40	£1.67	£16.70
50 - 90	£1.587	£15.87
100 - 240	£1.52	£15.20
250 - 490	£1.453	£14.53
500 +	£1.353	£13.53

*price indicative

RS Stock No.:: 906-4296
Mfr. Part No.:: BSC028N06NSATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	137 A
	Maximum Drain Source Voltage	60 V
	Package Type	TDSON
	Series	OptiMOS™ 5
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	4.2 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3.3V
	Minimum Gate Threshold Voltage	2.1V
	Maximum Power Dissipation	100 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Maximum Operating Temperature	+150 °C
	Number of Elements per Chip	1
	Length	6.1mm
	Typical Gate Charge @ Vgs	37 nC @ 10 V
	Width	5.35mm
	Transistor Material	Si
	Height	1.1mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.2V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 137 A
	Maximum Drain Source Voltage 60 V
	Package Type TDSON
	Series OptiMOS™ 5
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 4.2 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3.3V
	Minimum Gate Threshold Voltage 2.1V
	Maximum Power Dissipation 100 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Maximum Operating Temperature +150 °C
	Number of Elements per Chip 1
	Length 6.1mm
	Typical Gate Charge @ Vgs 37 nC @ 10 V
	Width 5.35mm
	Transistor Material Si
	Height 1.1mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.2V

RoHS Status: Exempt

Infineon OptiMOS™5 Power MOSFETs

Infineon OptiMOS™ 5 Series MOSFET, 137A Maximum Continuous Drain Current, 100W Maximum Power Dissipation - BSC028N06NSATMA1

This high-power MOSFET is suitable for applications where efficiency and reliability are essential. With a maximum continuous drain current of 137A and a breakdown voltage of 60V, it is well-suited for power management systems, making it an excellent choice for professionals in automation and electronics. Its enhanced gate threshold voltage range promotes precise switching performance, ensuring effective operation in various environments.

Features & Benefits

• Supports high-power applications with a maximum power dissipation of 100W
• Low RDS(on) of 4.2mΩ for improved efficiency
• N-channel configuration for enhanced performance
• TDSON package for effective thermal management
• Minimum operating temperature of -55°C, ideal for extreme conditions
• Avalanche rated for durability under transient conditions

Applications

• Utilised in synchronous rectification circuits for power supplies
• Suitable for electric vehicles and industrial automation
• Applied in switch-mode power supplies for effective energy conversion
• Used in UPS systems for dependable power backup solutions
• Appropriate for DC-DC converters and inverters in renewable energy systems

What is the suitable temperature range for operation?

It operates effectively within a temperature range of -55°C to +150°C, accommodating diverse environmental conditions.

How does this component handle thermal management?

The device's TDSON package optimises thermal resistance, ensuring efficient heat dissipation during operation.

What gate voltage is required for optimal performance?

The maximum gate-source voltage is ±20V, while the gate threshold voltage ranges from 2.1V to 3.3V, facilitating effective drive conditions.

Can it be used in high-frequency switching applications?

Yes, it is designed with dynamic characteristics that support high-frequency switching, making it suitable for modern electronic designs.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.