Infineon OptiMOS™ 5 N-Channel MOSFET, 137 A, 60 V, 8-Pin TDSON BSC028N06NSATMA1
- RS Stock No.:
- 906-4296
- Mfr. Part No.:
- BSC028N06NSATMA1
- Brand:
- Infineon
Subtotal (1 pack of 10 units)*
£16.70
(exc. VAT)
£20.00
(inc. VAT)
FREE delivery for orders over £50.00
- 5,000 unit(s) shipping from 27 November 2025
- Plus 999,994,990 unit(s) shipping from 26 February 2026
Units | Per unit | Per Pack* |
---|---|---|
10 - 40 | £1.67 | £16.70 |
50 - 90 | £1.587 | £15.87 |
100 - 240 | £1.52 | £15.20 |
250 - 490 | £1.453 | £14.53 |
500 + | £1.353 | £13.53 |
*price indicative
- RS Stock No.:
- 906-4296
- Mfr. Part No.:
- BSC028N06NSATMA1
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 137 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | TDSON | |
Series | OptiMOS™ 5 | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 4.2 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3.3V | |
Minimum Gate Threshold Voltage | 2.1V | |
Maximum Power Dissipation | 100 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Maximum Operating Temperature | +150 °C | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 37 nC @ 10 V | |
Length | 6.1mm | |
Width | 5.35mm | |
Transistor Material | Si | |
Minimum Operating Temperature | -55 °C | |
Height | 1.1mm | |
Forward Diode Voltage | 1.2V | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 137 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TDSON | ||
Series OptiMOS™ 5 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 4.2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.3V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 100 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 37 nC @ 10 V | ||
Length 6.1mm | ||
Width 5.35mm | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 1.1mm | ||
Forward Diode Voltage 1.2V | ||
RoHS Status: Exempt
Infineon OptiMOS™5 Power MOSFETs
Infineon OptiMOS™ 5 Series MOSFET, 137A Maximum Continuous Drain Current, 100W Maximum Power Dissipation - BSC028N06NSATMA1
Features & Benefits
• Low RDS(on) of 4.2mΩ for improved efficiency
• N-channel configuration for enhanced performance
• TDSON package for effective thermal management
• Minimum operating temperature of -55°C, ideal for extreme conditions
• Avalanche rated for durability under transient conditions
Applications
• Suitable for electric vehicles and industrial automation
• Applied in switch-mode power supplies for effective energy conversion
• Used in UPS systems for dependable power backup solutions
• Appropriate for DC-DC converters and inverters in renewable energy systems
What is the suitable temperature range for operation?
How does this component handle thermal management?
What gate voltage is required for optimal performance?
Can it be used in high-frequency switching applications?
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