Infineon OptiMOS 5 Type N-Channel MOSFET, 100 A, 60 V Enhancement, 8-Pin TDSON BSC028N06NSATMA1

RS Stock No.:: 906-4296
Mfr. Part No.:: BSC028N06NSATMA1
Brand:: Infineon

Infineon OptiMOS 5 Type N-Channel MOSFET, 100 A, 60 V Enhancement, 8-Pin TDSON BSC028N06NSATMA1

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£16.70

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£20.00

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Plus 4,980 unit(s) shipping from 29 December 2025

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Units	Per unit	Per Pack*
10 - 40	£1.67	£16.70
50 - 90	£1.587	£15.87
100 - 240	£1.52	£15.20
250 - 490	£1.453	£14.53
500 +	£1.353	£13.53

*price indicative

RS Stock No.:: 906-4296
Mfr. Part No.:: BSC028N06NSATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	100A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TDSON
	Series	OptiMOS 5
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	2.8mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	37nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	83W
	Maximum Gate Source Voltage Vgs	±20 V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Length	6.1mm
	Height	1.1mm
	Width	5.35 mm
	Standards/Approvals	Pb Free, Halogen Free (IEC61249-2-21), JEDEC (J-STD20,JESD22), RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 100A
	Maximum Drain Source Voltage Vds 60V
	Package Type TDSON
	Series OptiMOS 5
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 2.8mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 37nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 83W
	Maximum Gate Source Voltage Vgs ±20 V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Length 6.1mm
	Height 1.1mm
	Width 5.35 mm
	Standards/Approvals Pb Free, Halogen Free (IEC61249-2-21), JEDEC (J-STD20,JESD22), RoHS
	Automotive Standard No

RoHS Status: Exempt

Infineon OptiMOS™ 5 Series MOSFET, 137A Maximum Continuous Drain Current, 100W Maximum Power Dissipation - BSC028N06NSATMA1

This high-power MOSFET is suitable for applications where efficiency and reliability are essential. With a maximum continuous drain current of 137A and a breakdown voltage of 60V, it is well-suited for power management systems, making it an excellent choice for professionals in automation and electronics. Its enhanced gate threshold voltage range promotes precise switching performance, ensuring effective operation in various environments.

Features & Benefits

• Supports high-power applications with a maximum power dissipation of 100W

• Low RDS(on) of 4.2mΩ for improved efficiency

• N-channel configuration for enhanced performance

• TDSON package for effective thermal management

• Minimum operating temperature of -55°C, ideal for extreme conditions

• Avalanche rated for durability under transient conditions

Applications

• Utilised in synchronous rectification circuits for power supplies

• Suitable for electric vehicles and industrial automation

• Applied in switch-mode power supplies for effective energy conversion

• Used in UPS systems for dependable power backup solutions

• Appropriate for DC-DC converters and inverters in renewable energy systems

What is the suitable temperature range for operation?

It operates effectively within a temperature range of -55°C to +150°C, accommodating diverse environmental conditions.

How does this component handle thermal management?

The device's TDSON package optimises thermal resistance, ensuring efficient heat dissipation during operation.

What gate voltage is required for optimal performance?

The maximum gate-source voltage is ±20V, while the gate threshold voltage ranges from 2.1V to 3.3V, facilitating effective drive conditions.

Can it be used in high-frequency switching applications?

Yes, it is designed with dynamic characteristics that support high-frequency switching, making it suitable for modern electronic designs.

What safeguards are in place against electrical overstress?

It is validated for industrial applications and fully avalanche tested, providing assurance against transient surges in electrical demand.

Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency

Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.

Explore the Infineon range today