N-Channel MOSFET, 100 A, 25 V, 8-Pin TDSON Infineon BSC010NE2LSIATMA1
- RS Stock No.:
- 906-4277
- Mfr. Part No.:
- BSC010NE2LSIATMA1
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 906-4277
- Mfr. Part No.:
- BSC010NE2LSIATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 25 V | |
| Package Type | TDSON | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 1.4 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 96 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 6.1mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 39 nC @ 4.5 V | |
| Width | 5.35mm | |
| Transistor Material | Si | |
| Height | 1.1mm | |
| Forward Diode Voltage | 0.7V | |
| Series | OptiMOS | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 25 V | ||
Package Type TDSON | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 1.4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 96 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 6.1mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 39 nC @ 4.5 V | ||
Width 5.35mm | ||
Transistor Material Si | ||
Height 1.1mm | ||
Forward Diode Voltage 0.7V | ||
Series OptiMOS | ||
RoHS Status: Exempt