N-Channel MOSFET, 180 A, 60 V, 7-Pin D2PAK-7 Infineon IPB014N06NATMA1

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Packaging Options:
RS Stock No.:
906-2921
Mfr. Part No.:
IPB014N06NATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

60 V

Package Type

D2PAK-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

2.1 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

214 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

106 nC @ 10 V

Length

10.31mm

Width

11.05mm

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

4.57mm

Series

OptiMOS 5

Infineon OptiMOS™5 Power MOSFETs



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.