N-Channel MOSFET, 19 A, 200 V, 3-Pin TO-220 onsemi FQP19N20
- RS Stock No.:
- 903-4248
- Mfr. Part No.:
- FQP19N20
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 10 units)*
£11.81
(exc. VAT)
£14.17
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | £1.181 | £11.81 |
| 100 - 240 | £0.877 | £8.77 |
| 250 - 490 | £0.867 | £8.67 |
| 500 - 990 | £0.744 | £7.44 |
| 1000 + | £0.605 | £6.05 |
*price indicative
- RS Stock No.:
- 903-4248
- Mfr. Part No.:
- FQP19N20
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 19 A | |
| Maximum Drain Source Voltage | 200 V | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 150 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 140 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Length | 10.2mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 31 nC @ 10 V | |
| Transistor Material | Si | |
| Width | 4.7mm | |
| Minimum Operating Temperature | -55 °C | |
| Series | QFET | |
| Forward Diode Voltage | 1.5V | |
| Height | 15.38mm | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 19 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 150 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 140 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Length 10.2mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 31 nC @ 10 V | ||
Transistor Material Si | ||
Width 4.7mm | ||
Minimum Operating Temperature -55 °C | ||
Series QFET | ||
Forward Diode Voltage 1.5V | ||
Height 15.38mm | ||