N-Channel MOSFET, 3.9 A, 600 V, 3-Pin DPAK onsemi FCD4N60TM

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Packaging Options:
RS Stock No.:
903-4128
Mfr. Part No.:
FCD4N60TM
Brand:
ON Semiconductor
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Brand

ON Semiconductor

Channel Type

N

Maximum Continuous Drain Current

3.9 A

Maximum Drain Source Voltage

600 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

12.8 nC @ 10 V

Width

6.22mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Minimum Operating Temperature

-55 °C

Series

SuperFET

Height

2.39mm

Forward Diode Voltage

1.4V

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