N-Channel MOSFET, 272 A, 100 V, 3-Pin D2PAK Texas Instruments CSD19536KTTT

RS Stock No.:: 900-9857
Mfr. Part No.:: CSD19536KTTT
Brand:: Texas Instruments

N-Channel MOSFET, 272 A, 100 V, 3-Pin D2PAK Texas Instruments CSD19536KTTT

536 In stock - FREE next working day delivery available

Price Each

£5.51

(exc. VAT)

£6.61

(inc. VAT)

Units	Per unit
1 - 4	£5.51
5 - 9	£5.40
10 - 14	£5.22
15 - 24	£5.19
25 +	£5.02

RS Stock No.:: 900-9857
Mfr. Part No.:: CSD19536KTTT
Brand:: Texas Instruments

ESD Control Selection Guide V1

RS Stock No.:: 900-9857
Mfr. Part No.:: CSD19536KTTT
Brand:: Texas Instruments

ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	272 A
Maximum Drain Source Voltage	100 V
Series	NexFET
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	2.8 mΩ
Channel Mode	Enhancement
Maximum Power Dissipation	375 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	118 nC @ 0 V
Length	10.67mm
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Width	9.65mm
Forward Diode Voltage	1.1V
Minimum Operating Temperature	-55 °C
Height	4.83mm

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	272 A
Maximum Drain Source Voltage	100 V
Series	NexFET
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	2.8 mΩ
Channel Mode	Enhancement
Maximum Power Dissipation	375 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	118 nC @ 0 V
Length	10.67mm
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Width	9.65mm
Forward Diode Voltage	1.1V
Minimum Operating Temperature	-55 °C
Height	4.83mm

N-Channel MOSFET, 272 A, 100 V, 3-Pin D2PAK Texas Instruments CSD19536KTTT

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