onsemi N-Channel MOSFET, 71 A, 60 V, 5-Pin DFN NTMFS5C670NLT1G
- RS Stock No.:
- 900-8814P
- Mfr. Part No.:
- NTMFS5C670NLT1G
- Brand:
- onsemi
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£37.10
(exc. VAT)
£44.50
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 210 unit(s) shipping from 13 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 - 240 | £0.371 |
| 250 - 490 | £0.321 |
| 500 - 990 | £0.282 |
| 1000 + | £0.257 |
*price indicative
- RS Stock No.:
- 900-8814P
- Mfr. Part No.:
- NTMFS5C670NLT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 71 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | DFN | |
| Mounting Type | Surface Mount | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance | 8.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 61 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 20 nC @ 10 V, 9 nC @ 4.5 V | |
| Maximum Operating Temperature | +175 °C | |
| Width | 6.1mm | |
| Transistor Material | Si | |
| Length | 5.1mm | |
| Number of Elements per Chip | 1 | |
| Height | 1.95mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 71 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DFN | ||
Mounting Type Surface Mount | ||
Pin Count 5 | ||
Maximum Drain Source Resistance 8.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 61 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 20 nC @ 10 V, 9 nC @ 4.5 V | ||
Maximum Operating Temperature +175 °C | ||
Width 6.1mm | ||
Transistor Material Si | ||
Length 5.1mm | ||
Number of Elements per Chip 1 | ||
Height 1.95mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
- COO (Country of Origin):
- MY
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