N-Channel MOSFET, 120 A, 80 V, 3-Pin D2PAK Infineon IPB025N08N3GATMA1

Subtotal (1 pack of 2 units)*

£3.42

(exc. VAT)

£4.10

(inc. VAT)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later
Units
Per unit
Per Pack*
2 +£1.71£3.42

*price indicative

Packaging Options:
RS Stock No.:
898-6898
Mfr. Part No.:
IPB025N08N3GATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

80 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.9 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

9.45mm

Length

10.31mm

Typical Gate Charge @ Vgs

155 nC @ 10 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Height

4.57mm

Forward Diode Voltage

1.2V

Series

OptiMOS 3

Minimum Operating Temperature

-55 °C

RoHS Status: Exempt