N-Channel MOSFET, 13 A, 150 V, 8-Pin TSDSON Infineon BSZ900N15NS3GATMA1
- RS Stock No.:
- 898-6886P
- Mfr. Part No.:
- BSZ900N15NS3GATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal 50 units (supplied on a reel)*. Quantities below 150 on continuous strip
£67.45
(exc. VAT)
£80.95
(inc. VAT)
Stock information currently inaccessible
Units | Per unit |
|---|---|
| 50 - 240 | £1.349 |
| 250 - 490 | £1.089 |
| 500 - 1240 | £0.976 |
| 1250 + | £0.758 |
*price indicative
- RS Stock No.:
- 898-6886P
- Mfr. Part No.:
- BSZ900N15NS3GATMA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 13 A | |
| Maximum Drain Source Voltage | 150 V | |
| Package Type | TSDSON | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 91 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 38 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Width | 3.4mm | |
| Typical Gate Charge @ Vgs | 5 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 3.4mm | |
| Number of Elements per Chip | 1 | |
| Series | OptiMOS 3 | |
| Height | 1.1mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 13 A | ||
Maximum Drain Source Voltage 150 V | ||
Package Type TSDSON | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 91 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 38 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Width 3.4mm | ||
Typical Gate Charge @ Vgs 5 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Length 3.4mm | ||
Number of Elements per Chip 1 | ||
Series OptiMOS 3 | ||
Height 1.1mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
