N-Channel MOSFET, 9.9 A, 550 V, 3-Pin DPAK Infineon IPD50R380CEATMA1

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Packaging Options:
RS Stock No.:
897-7535
Mfr. Part No.:
IPD50R380CEATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

9.9 A

Maximum Drain Source Voltage

550 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

73 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Width

6.22mm

Typical Gate Charge @ Vgs

24.8 nC @ 10 V

Length

6.73mm

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

0.85V

Series

CoolMOS CE

Minimum Operating Temperature

-55 °C

Height

2.41mm

RoHS Status: Exempt

Infineon CoolMOS™ CE Power MOSFET



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.