N-Channel MOSFET, 80 A, 75 V, 3-Pin D2PAK Infineon IPB049NE7N3GATMA1

RS Stock No.:
897-7447
Mfr. Part No.:
IPB049NE7N3GATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

75 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.3V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.31mm

Typical Gate Charge @ Vgs

51 nC @ 10 V

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Width

9.45mm

Height

4.57mm

Forward Diode Voltage

1.2V

Series

OptiMOS 3

Minimum Operating Temperature

-55 °C

RoHS Status: Exempt

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy