N-Channel MOSFET, 80 A, 75 V, 3-Pin D2PAK Infineon IPB049NE7N3GATMA1

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Packaging Options:
RS Stock No.:
897-7447
Mfr. Part No.:
IPB049NE7N3GATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

75 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.3V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

51 nC @ 10 V

Length

10.31mm

Width

9.45mm

Transistor Material

Si

Height

4.57mm

Series

OptiMOS 3

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

RoHS Status: Exempt

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