Infineon OptiMOS™ 3 N-Channel MOSFET, 120 A, 120 V, 3-Pin TO-220 IPP041N12N3GXKSA1
- RS Stock No.:
- 897-7311P
- Mfr. Part No.:
- IPP041N12N3GXKSA1
- Brand:
- Infineon
Subtotal 20 units (supplied in a tube)*
£59.00
(exc. VAT)
£70.80
(inc. VAT)
FREE delivery for orders over £50.00
- 258 unit(s) ready to ship
| Units | Per unit | 
|---|---|
| 20 - 98 | £2.95 | 
| 100 - 198 | £2.555 | 
| 200 - 498 | £2.43 | 
| 500 + | £2.175 | 
*price indicative
- RS Stock No.:
- 897-7311P
- Mfr. Part No.:
- IPP041N12N3GXKSA1
- Brand:
- Infineon
| Select all | Attribute | Value | 
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 120 A | |
| Maximum Drain Source Voltage | 120 V | |
| Series | OptiMOS™ 3 | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4.1 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 300 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Width | 4.57mm | |
| Typical Gate Charge @ Vgs | 158 nC | |
| Length | 10.36mm | |
| Number of Elements per Chip | 1 | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 15.95mm | |
| Select all | ||
|---|---|---|
| Brand Infineon | ||
| Channel Type N | ||
| Maximum Continuous Drain Current 120 A | ||
| Maximum Drain Source Voltage 120 V | ||
| Series OptiMOS™ 3 | ||
| Package Type TO-220 | ||
| Mounting Type Through Hole | ||
| Pin Count 3 | ||
| Maximum Drain Source Resistance 4.1 mΩ | ||
| Channel Mode Enhancement | ||
| Maximum Gate Threshold Voltage 4V | ||
| Minimum Gate Threshold Voltage 2V | ||
| Maximum Power Dissipation 300 W | ||
| Transistor Configuration Single | ||
| Maximum Gate Source Voltage -20 V, +20 V | ||
| Maximum Operating Temperature +175 °C | ||
| Transistor Material Si | ||
| Width 4.57mm | ||
| Typical Gate Charge @ Vgs 158 nC | ||
| Length 10.36mm | ||
| Number of Elements per Chip 1 | ||
| Forward Diode Voltage 1.2V | ||
| Minimum Operating Temperature -55 °C | ||
| Height 15.95mm | ||


