Infineon OptiMOS™ 3 N-Channel MOSFET, 120 A, 120 V, 3-Pin TO-220 IPP041N12N3GXKSA1
- RS Stock No.:
- 897-7311P
- Mfr. Part No.:
- IPP041N12N3GXKSA1
- Brand:
- Infineon
Subtotal 20 units (supplied in a tube)*
£59.00
(exc. VAT)
£70.80
(inc. VAT)
FREE delivery for orders over £50.00
- Plus 264 unit(s) shipping from 06 October 2025
Units | Per unit |
---|---|
20 - 98 | £2.95 |
100 - 198 | £2.555 |
200 - 498 | £2.43 |
500 + | £2.175 |
*price indicative
- RS Stock No.:
- 897-7311P
- Mfr. Part No.:
- IPP041N12N3GXKSA1
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 120 A | |
Maximum Drain Source Voltage | 120 V | |
Series | OptiMOS™ 3 | |
Package Type | TO-220 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 4.1 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 300 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Maximum Operating Temperature | +175 °C | |
Typical Gate Charge @ Vgs | 158 nC | |
Length | 10.36mm | |
Number of Elements per Chip | 1 | |
Width | 4.57mm | |
Transistor Material | Si | |
Forward Diode Voltage | 1.2V | |
Minimum Operating Temperature | -55 °C | |
Height | 15.95mm | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 120 A | ||
Maximum Drain Source Voltage 120 V | ||
Series OptiMOS™ 3 | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4.1 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 158 nC | ||
Length 10.36mm | ||
Number of Elements per Chip 1 | ||
Width 4.57mm | ||
Transistor Material Si | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 15.95mm | ||