N-Channel MOSFET, 11 A, 650 V, 3-Pin TO-220 FP Infineon IPA60R299CPXKSA1

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Packaging Options:
RS Stock No.:
897-7232
Mfr. Part No.:
IPA60R299CPXKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220 FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

299 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

33 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.85mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.65mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

22 nC @ 10 V

Height

16.15mm

Series

CoolMOS CP

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Infineon CoolMOS™CP Power MOSFET



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.