Toshiba TK N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220SIS TK10A80E,S4X(S

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

800 V

Package Type

TO-220SIS

Series

TK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Length

10mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

46 nC @ 10 V

Width

4.5mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Height

15mm