Toshiba TK N-Channel MOSFET, 42 A, 120 V, 3-Pin TO-220SIS TK42A12N1,S4X(S
- RS Stock No.:
 - 896-2381
 - Mfr. Part No.:
 - TK42A12N1,S4X(S
 - Brand:
 - Toshiba
 
Bulk discount available
Subtotal (1 pack of 5 units)*
£3.20
(exc. VAT)
£3.85
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 5 unit(s) ready to ship
 
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units  | Per unit  | Per Pack*  | 
|---|---|---|
| 5 - 45 | £0.64 | £3.20 | 
| 50 - 95 | £0.528 | £2.64 | 
| 100 - 245 | £0.482 | £2.41 | 
| 250 - 495 | £0.468 | £2.34 | 
| 500 + | £0.458 | £2.29 | 
*price indicative
- RS Stock No.:
 - 896-2381
 - Mfr. Part No.:
 - TK42A12N1,S4X(S
 - Brand:
 - Toshiba
 
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all  | Attribute | Value | 
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 42 A | |
| Maximum Drain Source Voltage | 120 V | |
| Package Type | TO-220SIS | |
| Series | TK | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 9.4 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Maximum Power Dissipation | 35 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 52 nC @ 10 V | |
| Length | 10mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 4.5mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 15mm | |
| Select all | ||
|---|---|---|
Brand Toshiba  | ||
Channel Type N  | ||
Maximum Continuous Drain Current 42 A  | ||
Maximum Drain Source Voltage 120 V  | ||
Package Type TO-220SIS  | ||
Series TK  | ||
Mounting Type Through Hole  | ||
Pin Count 3  | ||
Maximum Drain Source Resistance 9.4 mΩ  | ||
Channel Mode Enhancement  | ||
Maximum Gate Threshold Voltage 4V  | ||
Maximum Power Dissipation 35 W  | ||
Transistor Configuration Single  | ||
Maximum Gate Source Voltage -20 V, +20 V  | ||
Typical Gate Charge @ Vgs 52 nC @ 10 V  | ||
Length 10mm  | ||
Number of Elements per Chip 1  | ||
Transistor Material Si  | ||
Width 4.5mm  | ||
Maximum Operating Temperature +150 °C  | ||
Height 15mm  | ||
- COO (Country of Origin):
 - CN
 
MOSFET Transistors, Toshiba
Related links
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