Toshiba TK N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-247 TK39N60W,S1VF(S
- RS Stock No.:
- 896-2372
- Mfr. Part No.:
- TK39N60W,S1VF(S
- Brand:
- Toshiba
Currently unavailable
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- RS Stock No.:
- 896-2372
- Mfr. Part No.:
- TK39N60W,S1VF(S
- Brand:
- Toshiba
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Toshiba | |
Channel Type | N | |
Maximum Continuous Drain Current | 39 A | |
Maximum Drain Source Voltage | 600 V | |
Package Type | TO-247 | |
Series | TK | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 65 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3.7V | |
Maximum Power Dissipation | 270 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Transistor Material | Si | |
Length | 15.94mm | |
Width | 5.02mm | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 110 nC @ 10 V | |
Number of Elements per Chip | 1 | |
Height | 20.95mm | |
Select all | ||
---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 39 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-247 | ||
Series TK | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 65 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.7V | ||
Maximum Power Dissipation 270 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Transistor Material Si | ||
Length 15.94mm | ||
Width 5.02mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 110 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Height 20.95mm | ||
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