P-Channel MOSFET, 980 mA, 100 V, 3 + Tab-Pin SOT-223 Infineon BSP321PH6327XTSA1

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

980 mA

Maximum Drain Source Voltage

100 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3 + Tab

Maximum Drain Source Resistance

900 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

9 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

6.5mm

Number of Elements per Chip

1

Width

1.6mm

Transistor Material

Si

Height

3.5mm

Series

SIPMOS

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C