Infineon OptiMOS™ 3 N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 FP IPA057N06N3GXKSA1

RS Stock No.:: 892-2220
Mfr. Part No.:: IPA057N06N3GXKSA1
Brand:: Infineon

Infineon OptiMOS™ 3 N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 FP IPA057N06N3GXKSA1

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Subtotal (1 pack of 10 units)*

£17.40

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£20.90

(inc. VAT)

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Shipping from 04 March 2026

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Units	Per unit	Per Pack*
10 - 40	£1.74	£17.40
50 - 90	£1.653	£16.53
100 - 240	£1.583	£15.83
250 - 490	£1.514	£15.14
500 +	£1.409	£14.09

*price indicative

RS Stock No.:: 892-2220
Mfr. Part No.:: IPA057N06N3GXKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	60 A
	Maximum Drain Source Voltage	60 V
	Package Type	TO-220 FP
	Series	OptiMOS™ 3
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	5.7 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	38 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	4.85mm
	Transistor Material	Si
	Number of Elements per Chip	1
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	61 nC @ 10 V
	Length	10.65mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.2V
	Height	16.15mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 60 A
	Maximum Drain Source Voltage 60 V
	Package Type TO-220 FP
	Series OptiMOS™ 3
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 5.7 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 38 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Width 4.85mm
	Transistor Material Si
	Number of Elements per Chip 1
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 61 nC @ 10 V
	Length 10.65mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.2V
	Height 16.15mm

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating

Infineon OptiMOS™ 3 Series MOSFET, 60A Maximum Continuous Drain Current, 38W Maximum Power Dissipation - IPA057N06N3GXKSA1

This MOSFET is suited for a variety of high-performance applications in automation, electronics, and electrical systems. Capable of handling a maximum continuous drain current of 60A and a drain-source voltage of 60V, it plays a crucial role in efficient power management and control. The robust design ensures stable operation under different conditions.

Features & Benefits

• N-channel configuration provides effective switching performance
• Enhancement mode operation enhances efficiency in applications
• Low RDS(on) value of 5.7mΩ reduces power losses
• Maximum power dissipation of 38W supports high output
• Operates within a temperature range of -55°C to +175°C for diverse environments
• High gate threshold voltage of 4V ensures precise control and responsiveness

Applications

• Applicable in motor control for industrial automation
• Suitable for power supply modules in electronics
• Commonly used in inverter circuits for renewable energy systems
• Employed in automotive for effective power management
• Ideal for switching power supplies in telecommunications

What is the maximum power dissipation capability?

It can handle a maximum power dissipation of 38W, ensuring safe operation.

In which temperature range can it operate effectively?

The component reliably functions between -55°C and +175°C, making it versatile for various applications.

What is the significance of the low RDS(on) value?

A low RDS(on) value of 5.7mΩ minimises power losses during operation, enhancing efficiency.

How does the enhancement mode contribute to its performance?

The enhancement mode allows for enhanced control and efficiency, particularly in applications requiring precise switching.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.