Toshiba TK N-Channel MOSFET, 27 A, 650 V, 3-Pin TO-247 TK28N65W,S1F(S
- RS Stock No.:
- 891-2942
- Mfr. Part No.:
- TK28N65W,S1F(S
- Brand:
- Toshiba
Bulk discount available
Subtotal (1 pack of 2 units)*
£4.00
(exc. VAT)
£4.80
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | £2.00 | £4.00 |
| 10 - 18 | £1.48 | £2.96 |
| 20 - 48 | £1.44 | £2.88 |
| 50 - 98 | £1.405 | £2.81 |
| 100 + | £1.37 | £2.74 |
*price indicative
- RS Stock No.:
- 891-2942
- Mfr. Part No.:
- TK28N65W,S1F(S
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 27 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-247 | |
| Series | TK | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 110 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Maximum Power Dissipation | 230 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Length | 15.94mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 75 nC @ 10 V | |
| Transistor Material | Si | |
| Width | 5.02mm | |
| Height | 20.95mm | |
| Forward Diode Voltage | 1.7V | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 27 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-247 | ||
Series TK | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 110 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Maximum Power Dissipation 230 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Length 15.94mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 75 nC @ 10 V | ||
Transistor Material Si | ||
Width 5.02mm | ||
Height 20.95mm | ||
Forward Diode Voltage 1.7V | ||
- COO (Country of Origin):
- CN