Toshiba TK N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220SIS TK20A60W,S5VX(M

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220SIS

Series

TK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

155 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

48 nC @ 10 V

Length

10mm

Width

4.5mm

Number of Elements per Chip

1

Height

15mm

Forward Diode Voltage

1.7V