GaN N-Channel MOSFET, 9 A, 600 V, 3-Pin TO-220 onsemi NTP8G202NG
- RS Stock No.:
- 882-9834
- Mfr. Part No.:
- NTP8G202NG
- Brand:
- ON Semiconductor
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 882-9834
- Mfr. Part No.:
- NTP8G202NG
- Brand:
- ON Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | ON Semiconductor | |
Channel Type | N | |
Maximum Continuous Drain Current | 9 A | |
Maximum Drain Source Voltage | 600 V | |
Package Type | TO-220 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 350 mΩ | |
Channel Mode | Enhancement | |
Maximum Power Dissipation | 65 W | |
Transistor Configuration | Cascode | |
Maximum Gate Source Voltage | -18 V, +18 V | |
Number of Elements per Chip | 1 | |
Width | 4.83mm | |
Typical Gate Charge @ Vgs | 6.2 nC @ 4.5 V | |
Length | 10.53mm | |
Transistor Material | GaN | |
Maximum Operating Temperature | +150 °C | |
Forward Diode Voltage | 2.1V | |
Height | 15.75mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand ON Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 9 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 350 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 65 W | ||
Transistor Configuration Cascode | ||
Maximum Gate Source Voltage -18 V, +18 V | ||
Number of Elements per Chip 1 | ||
Width 4.83mm | ||
Typical Gate Charge @ Vgs 6.2 nC @ 4.5 V | ||
Length 10.53mm | ||
Transistor Material GaN | ||
Maximum Operating Temperature +150 °C | ||
Forward Diode Voltage 2.1V | ||
Height 15.75mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- PH
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