STMicroelectronics MDmesh N-Channel MOSFET, 138 A, 650 V, 3-Pin Max247 STY145N65M5
- RS Stock No.:
- 880-5474P
- Mfr. Part No.:
- STY145N65M5
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal 2 units (supplied in a tube)*
£61.38
(exc. VAT)
£73.66
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 07 May 2026
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Units | Per unit |
|---|---|
| 2 - 4 | £30.69 |
| 5 - 9 | £29.91 |
| 10 + | £29.16 |
*price indicative
- RS Stock No.:
- 880-5474P
- Mfr. Part No.:
- STY145N65M5
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 138 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | Max247 | |
| Series | MDmesh | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 15 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 625 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 15.9mm | |
| Number of Elements per Chip | 1 | |
| Width | 5.3mm | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 414 nC @ 10 V | |
| Forward Diode Voltage | 1.5V | |
| Height | 20.3mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 138 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type Max247 | ||
Series MDmesh | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 15 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 625 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Maximum Operating Temperature +150 °C | ||
Length 15.9mm | ||
Number of Elements per Chip 1 | ||
Width 5.3mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 414 nC @ 10 V | ||
Forward Diode Voltage 1.5V | ||
Height 20.3mm | ||
- COO (Country of Origin):
- CN
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics