Infineon HEXFET N-Channel MOSFET, 183 A, 75 V, 3-Pin D2PAK IRFS7734PBF
- RS Stock No.:
- 879-3362
- Mfr. Part No.:
- IRFS7734PBF
- Brand:
- Infineon
- RS Stock No.:
- 879-3362
- Mfr. Part No.:
- IRFS7734PBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 183 A | |
Maximum Drain Source Voltage | 75 V | |
Package Type | D2PAK (TO-263) | |
Series | HEXFET | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 3.5 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3.7V | |
Minimum Gate Threshold Voltage | 2.1V | |
Maximum Power Dissipation | 290 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 10.67mm | |
Typical Gate Charge @ Vgs | 180 nC @ 10 V | |
Maximum Operating Temperature | +175 °C | |
Number of Elements per Chip | 1 | |
Width | 9.65mm | |
Transistor Material | Si | |
Height | 4.83mm | |
Priced to Clear | Yes | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.2V | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 183 A | ||
Maximum Drain Source Voltage 75 V | ||
Package Type D2PAK (TO-263) | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.7V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 290 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.67mm | ||
Typical Gate Charge @ Vgs 180 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Width 9.65mm | ||
Transistor Material Si | ||
Height 4.83mm | ||
Priced to Clear Yes | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||