Infineon HEXFET N-Channel MOSFET, 269 A, 75 V, 7-Pin D2PAK IRFS7730-7PPBF

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RS will no longer stock this product.
Packaging Options:
RS Stock No.:
879-3353
Mfr. Part No.:
IRFS7730-7PPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

269 A

Maximum Drain Source Voltage

75 V

Package Type

D2PAK (TO-263)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

2.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.67mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Width

9.65mm

Typical Gate Charge @ Vgs

285 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

4.83mm

Forward Diode Voltage

1.2V

COO (Country of Origin):
MX