Dual N/P-Channel MOSFET, 4.6 A, 6.8 A, 30 V, 8-Pin SOIC Infineon IRF9389TRPBF
- RS Stock No.:
- 879-3312
- Mfr. Part No.:
- IRF9389TRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 25 units)*
£11.325
(exc. VAT)
£13.60
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 175 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 225 | £0.453 | £11.33 |
| 250 - 1975 | £0.28 | £7.00 |
| 2000 - 3975 | £0.232 | £5.80 |
| 4000 - 7975 | £0.226 | £5.65 |
| 8000 + | £0.22 | £5.50 |
*price indicative
- RS Stock No.:
- 879-3312
- Mfr. Part No.:
- IRF9389TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 4.6 A, 6.8 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 40 mΩ, 103 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.3V | |
| Minimum Gate Threshold Voltage | 1.3V | |
| Maximum Power Dissipation | 2 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 2 | |
| Transistor Material | Si | |
| Width | 4mm | |
| Typical Gate Charge @ Vgs | 6.8 nC @ 10 V, 8.1 nC @ 10 V | |
| Length | 5mm | |
| Maximum Operating Temperature | +150 °C | |
| Series | HEXFET | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.5mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 4.6 A, 6.8 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 40 mΩ, 103 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.3V | ||
Minimum Gate Threshold Voltage 1.3V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 2 | ||
Transistor Material Si | ||
Width 4mm | ||
Typical Gate Charge @ Vgs 6.8 nC @ 10 V, 8.1 nC @ 10 V | ||
Length 5mm | ||
Maximum Operating Temperature +150 °C | ||
Series HEXFET | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.5mm | ||
- COO (Country of Origin):
- CN
Dual N/P-Channel Power MOSFET, Infineon
Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
