N-Channel MOSFET, 10 A, 650 V, 3-Pin IPAK STMicroelectronics STU13N65M2

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We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
Packaging Options:
RS Stock No.:
876-5714
Mfr. Part No.:
STU13N65M2
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

650 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

430 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Maximum Operating Temperature

+150 °C

Length

6.6mm

Typical Gate Charge @ Vgs

17 nC @ 10 V

Width

2.4mm

Transistor Material

Si

Number of Elements per Chip

1

Forward Diode Voltage

1.6V

Height

6.2mm

Series

MDmesh M2

COO (Country of Origin):
CN

N-channel MDmesh™ M2 Series, STMicroelectronics


A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).


MOSFET Transistors, STMicroelectronics