IXYS GigaMOS, HiperFET Type N-Channel MOSFET, 550 A, 55 V Enhancement, 24-Pin SMPD

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Subtotal 2 units (supplied in a tube)*

£76.04

(exc. VAT)

£91.24

(inc. VAT)

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  • Shipping from 30 December 2026
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Units
Per unit
2 - 4£38.02
5 - 9£36.85
10 - 14£36.47
15 +£36.08

*price indicative

Packaging Options:
RS Stock No.:
875-2500P
Mfr. Part No.:
MMIX1T550N055T2
Brand:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

550A

Maximum Drain Source Voltage Vds

55V

Series

GigaMOS, HiperFET

Package Type

SMPD

Mount Type

Surface

Pin Count

24

Maximum Drain Source Resistance Rds

1.3mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

595nC

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

830W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

25.25mm

Height

5.7mm

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series


MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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