IXYS GigaMOS, HiperFET N-Channel MOSFET, 550 A, 55 V, 24-Pin SMPD MMIX1T550N055T2
- RS Stock No.:
- 875-2500P
- Mfr. Part No.:
- MMIX1T550N055T2
- Brand:
- IXYS
Save 5% when you buy 15 units
Subtotal 2 units (supplied in a tube)*
£76.04
(exc. VAT)
£91.24
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 23 April 2026
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Units | Per unit |
|---|---|
| 2 - 4 | £38.02 |
| 5 - 9 | £36.85 |
| 10 - 14 | £36.47 |
| 15 + | £36.08 |
*price indicative
- RS Stock No.:
- 875-2500P
- Mfr. Part No.:
- MMIX1T550N055T2
- Brand:
- IXYS
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 550 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | SMPD | |
| Series | GigaMOS, HiperFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 24 | |
| Maximum Drain Source Resistance | 1.3 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.8V | |
| Maximum Power Dissipation | 830 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 595 nC @ 10 V | |
| Transistor Material | Si | |
| Width | 23.25mm | |
| Length | 25.25mm | |
| Height | 5.7mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 550 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type SMPD | ||
Series GigaMOS, HiperFET | ||
Mounting Type Surface Mount | ||
Pin Count 24 | ||
Maximum Drain Source Resistance 1.3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.8V | ||
Maximum Power Dissipation 830 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 595 nC @ 10 V | ||
Transistor Material Si | ||
Width 23.25mm | ||
Length 25.25mm | ||
Height 5.7mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||