IXYS GigaMOS, HiperFET N-Channel MOSFET, 334 A, 100 V, 24-Pin SMPD MMIX1F420N10T

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Unavailable
RS will no longer stock this product.
Packaging Options:
RS Stock No.:
875-2497
Mfr. Part No.:
MMIX1F420N10T
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

334 A

Maximum Drain Source Voltage

100 V

Series

GigaMOS, HiperFET

Package Type

SMPD

Mounting Type

Surface Mount

Pin Count

24

Maximum Drain Source Resistance

2.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

680 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

670 nC @ 10 V

Number of Elements per Chip

1

Length

25.25mm

Width

23.25mm

Transistor Material

Si

Height

5.7mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series



MOSFET Transistors, IXYS


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