IXYS GigaMOS, HiperFET N-Channel MOSFET, 100 A, 300 V, 24-Pin SMPD MMIX1F160N30T

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Unavailable
RS will no longer stock this product.
Packaging Options:
RS Stock No.:
875-2487
Mfr. Part No.:
MMIX1F160N30T
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

300 V

Package Type

SMPD

Series

GigaMOS, HiperFET

Mounting Type

Surface Mount

Pin Count

24

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

570 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Length

25.25mm

Transistor Material

Si

Width

23.25mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

376 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

5.7mm

Forward Diode Voltage

1.4V

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series



MOSFET Transistors, IXYS


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