N-Channel MOSFET, 58 A, 100 V, 8-Pin PQFN Infineon IRFH7110TRPBF
- RS Stock No.:
- 872-4177
- Mfr. Part No.:
- IRFH7110TRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
£3.77
(exc. VAT)
£4.52
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | £0.377 | £3.77 |
| 50 + | £0.372 | £3.72 |
*price indicative
- RS Stock No.:
- 872-4177
- Mfr. Part No.:
- IRFH7110TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 58 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | PQFN | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 13.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 104 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 5mm | |
| Typical Gate Charge @ Vgs | 58 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 5.85mm | |
| Series | HEXFET | |
| Height | 1.17mm | |
| Forward Diode Voltage | 1.3V | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 58 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type PQFN | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 13.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 104 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 5mm | ||
Typical Gate Charge @ Vgs 58 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Length 5.85mm | ||
Series HEXFET | ||
Height 1.17mm | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||