Infineon HEXFET N-Channel MOSFET, 44 A, 200 V, 3-Pin TO-220AB IRFB38N20DPBF
- RS Stock No.:
- 865-5803
- Mfr. Part No.:
- IRFB38N20DPBF
- Brand:
- Infineon
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- RS Stock No.:
- 865-5803
- Mfr. Part No.:
- IRFB38N20DPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 44 A | |
| Maximum Drain Source Voltage | 200 V | |
| Package Type | TO-220AB | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 54 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 320 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Typical Gate Charge @ Vgs | 60 nC @ 10 V | |
| Width | 4.69mm | |
| Length | 10.54mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Height | 19.3mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 44 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 54 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 320 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 60 nC @ 10 V | ||
Width 4.69mm | ||
Length 10.54mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Height 19.3mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- KR
Infineon HEXFET Series MOSFET, 43A Maximum Continuous Drain Current, 300W Maximum Power Dissipation - IRFB38N20DPBF
This MOSFET is designed for high efficiency and effective thermal management in varied applications. Its robust enhancement mode N-channel design allows for considerable continuous drain currents while ensuring low on-resistance. This component is well-suited for power management solutions, enhancing performance and dependability in numerous electronic environments.
Features & Benefits
• Supports a maximum continuous drain current of 43A
• Provides a low Rds(on) of 54mΩ to minimise energy loss
• Capable of withstanding drain-source voltages up to 200V
• High operating temperature tolerance ranging from -55°C to +175°C
• Designed for high-speed switching applications with low gate charge
• Integrates effectively into DC-DC converters and power supplies
Applications
• Utilised in high-frequency DC-DC converters for efficient power management
• Suitable for in plasma display panels
• Employed in industrial automation systems requiring consistent switching
• Used in power supplies where thermal efficiency is crucial
• Ideal for electronic designs needing high performance at elevated temperatures
What kind of currents can it handle in high-temperature applications?
It can manage up to 30A continuous drain current at 100°C, ensuring consistent performance under elevated temperatures.
How does this component perform in high-frequency applications?
It is explicitly designed for high-speed switching, featuring low gate charge and minimal delay times, making it appropriate for such applications.
What packaging options are available for this product?
It is available in a TO-220AB package, facilitating through-hole mounting for easy integration into electronic circuits.
Can this be used in conjunction with other power management devices?
Yes, it is frequently used alongside various DC-DC converters to enhance efficiency in power delivery systems.
What measures should be taken for installation?
Ensure proper thermal management is in place, including heatsinking, to maintain optimal junction temperatures during operation.