N-Channel MOSFET, 31 A, 200 V, 3-Pin TO-220AB Infineon IRFB31N20DPBF

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Packaging Options:
RS Stock No.:
865-5793
Mfr. Part No.:
IRFB31N20DPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

4.69mm

Typical Gate Charge @ Vgs

70 nC @ 10 V

Length

10.54mm

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Height

19.3mm

Minimum Operating Temperature

-55 °C

Series

HEXFET

COO (Country of Origin):
PH