onsemi Dual N-Channel MOSFET, 3.3 A, 62 V, 8-Pin SOIC FDSS2407

Stock information currently inaccessible

Specifications

Technical Reference

Legislation and Compliance

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	ON Semiconductor
	Channel Type	N
	Maximum Continuous Drain Current	3.3 A
	Maximum Drain Source Voltage	62 V
	Package Type	SOIC
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	132 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	2.27 W
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-20 V, +20 V
	Transistor Material	Si
	Maximum Operating Temperature	+150 °C
	Length	4.9mm
	Typical Gate Charge @ Vgs	3.3 nC @ 5 V
	Number of Elements per Chip	2
	Width	3.9mm
	Height	1.575mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand ON Semiconductor
	Channel Type N
	Maximum Continuous Drain Current 3.3 A
	Maximum Drain Source Voltage 62 V
	Package Type SOIC
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 132 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 2.27 W
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -20 V, +20 V
	Transistor Material Si
	Maximum Operating Temperature +150 °C
	Length 4.9mm
	Typical Gate Charge @ Vgs 3.3 nC @ 5 V
	Number of Elements per Chip 2
	Width 3.9mm
	Height 1.575mm
	Minimum Operating Temperature -55 °C

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy