Name: onsemi PowerTrench Dual N-Channel MOSFET, 56 A, 130 A, 30 V, 8-Pin Power 56 FDMS3660AS
Brand: ON Semiconductor
SKU: 864-8363
Price: 0.40 GBP
Availability: OutOfStock

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	ON Semiconductor
	Channel Type	N
	Maximum Continuous Drain Current	56 A, 130 A
	Maximum Drain Source Voltage	30 V
	Package Type	Power 56
	Series	PowerTrench
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	2.7 mΩ, 11 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	1.1V
	Maximum Power Dissipation	2.2 W, 2.5 W
	Transistor Configuration	Series
	Maximum Gate Source Voltage	-20 V, -12 V, +12 V, +20 V
	Length	5mm
	Number of Elements per Chip	2
	Typical Gate Charge @ Vgs	21 nC @ 10 V, 64 nC @ 10 V
	Transistor Material	Si
	Width	5.9mm
	Maximum Operating Temperature	+150 °C
	Height	1.1mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand ON Semiconductor
	Channel Type N
	Maximum Continuous Drain Current 56 A, 130 A
	Maximum Drain Source Voltage 30 V
	Package Type Power 56
	Series PowerTrench
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 2.7 mΩ, 11 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 1.1V
	Maximum Power Dissipation 2.2 W, 2.5 W
	Transistor Configuration Series
	Maximum Gate Source Voltage -20 V, -12 V, +12 V, +20 V
	Length 5mm
	Number of Elements per Chip 2
	Typical Gate Charge @ Vgs 21 nC @ 10 V, 64 nC @ 10 V
	Transistor Material Si
	Width 5.9mm
	Maximum Operating Temperature +150 °C
	Height 1.1mm
	Minimum Operating Temperature -55 °C

onsemi PowerTrench Dual N-Channel MOSFET, 56 A, 130 A, 30 V, 8-Pin Power 56 FDMS3660AS

Be the first to know about our latest products and offers