onsemi PowerTrench N-Channel MOSFET, 100 A, 75 V, 8-Pin Power 56 FDMS037N08B
- RS Stock No.:
- 864-8348
- Mfr. Part No.:
- FDMS037N08B
- Brand:
- ON Semiconductor
Bulk discount available
Subtotal (1 pack of 5 units)*
£3.99
(exc. VAT)
£4.79
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £0.798 | £3.99 |
| 50 - 95 | £0.742 | £3.71 |
| 100 - 245 | £0.722 | £3.61 |
| 250 - 495 | £0.694 | £3.47 |
| 500 + | £0.686 | £3.43 |
*price indicative
- RS Stock No.:
- 864-8348
- Mfr. Part No.:
- FDMS037N08B
- Brand:
- ON Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ON Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 75 V | |
| Package Type | Power 56 | |
| Series | PowerTrench | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 3.7 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 104.2 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 76.8 nC @ 10 V | |
| Length | 5.1mm | |
| Width | 6.25mm | |
| Transistor Material | Si | |
| Height | 1.05mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand ON Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 75 V | ||
Package Type Power 56 | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 3.7 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 104.2 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 76.8 nC @ 10 V | ||
Length 5.1mm | ||
Width 6.25mm | ||
Transistor Material Si | ||
Height 1.05mm | ||
Minimum Operating Temperature -55 °C | ||